features advanced trench process technology high density cell design for ultra low on-resistance specially designed for dc/dc converters and motor drivers fully characterized avalanche voltage and current improved shoot-through fom maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds 25 v gs + 20 i d 55 i dm 350 t a = 25 o c 70 t a = 75 o c 42 t j , t stg -55 to 150 o c e as 300 mj r q j c 1.8 junction-to-ambient thermal resistance (pcb mounted) r q ja 40 note: 1. maximum dc current limited by the package 2. 1-in 2oz cu pcb board o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current avalanche energy with single pulse i d =50a, v dd =25v, l=0.5mh operating junction and storage temperature range continuous drain current gate-source voltage maximum power dissipation to-252 (d-pak) v ds = 25v r ds(on) , v gs@10v , i d@30a = 6m w r ds(on), v gs@4.5v, i d@30a = 9m w fmds55n25 25v n-channel enhancement-mode mosfet
electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250ua 25 - - v drain-source on-state resistance r ds(on) v gs = 4.5v, i d = 30a 7.5 9.0 drain-source on-state resistance r ds(on) v gs = 10v, i d = 30a 4.5 6.0 gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 1 1.6 3 v zero gate voltage drain current i dss v ds = 25v, v gs = 0v 1 ua gate body leakage i gss v gs = + 20 v, v ds = 0v + 10 0 na gate resistance rg forward transconductance g fs v ds = 15v, i d = 15a s dynamic total gate charge q g 26 gate-source charge q gs 6 gate-drain charge q gd 5 turn-on delay time t d(on) 17 turn-on rise time t r 3.5 turn-off delay time t d(off) 40 turn-off fall time t f 6 input capacitance c iss 2134 output capacitance c oss 343 reverse transfer capacitance c rss 134 source-drain diode max. diode forward current i s 20 a diode forward voltage v sd i s = 20a, v gs = 0v 0.85 1.3 v note : pulse test: pulse width <= 300us, duty cycle<= 2% v ds = 15v, v gs = 0v f = 1.0 mhz pf m w v dd = 15v, r l = 15 w i d = 1a, v gen = 10v r g = 6 w ns v ds = 15v, i d = 25a v gs = 10v fmds55n25 25v n-channel enhancement-mode
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